Zero-bias microwave detectors based on array of nanorectifiers coupled with a dipole antenna. (April 2016)

• Record Type: Journal Article
• Authors: Kasjoo, Shahrir R.; Singh, Arun K.; Mat Isa, Siti S.; Ramli, Muhammad M.; Mohamad Isa, Muammar; Ahmad, Norhawati; Mohd Nor, Nurul I.; Khalid, Nazuhusna; Song, Ai Min
• Is Part Of: Solid-state electronics. Volume 118(2016)
• Page Start: 36
• Page End: 40
• Publication Date: 2016-04
• Subjects: Diodes -- Nanotechnology -- Rectifiers; Semiconductors -- Periodicals; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.sse.2016.01.010
• Languages: English
• ISSNs: 0038-1101

Abstract

Highlights: An array of nanodiodes has been developed to rectify RF signals at zero bias. The nanodiode array was fabricated at low cost, using only one lithography step. The device's responsivity attained was ∼70 V/W with NEP of ∼0.18 nW/Hz 1/2 . The intrinsic responsivity can achieve up to ∼5 kV/W with NEP of ∼2.6 pW/Hz 1/2 . Zero-bias rectifiers offer low dc power consumption and low 1/ f noise. Abstract: We report on zero-bias microwave detection using a large array of unipolar nanodevices, known as the self-switching diodes (SSDs). The large array was realized in a single lithography step without the need of interconnection layers, hence allowing for a simple and low-cost fabrication process. The SSD array was coupled with a narrowband dipole antenna with a resonant frequency of 890 MHz, to form a simple rectenna (rectifying antenna). The extrinsic voltage responsivity and noise-equivalent-power (NEP) of the rectenna were ∼70 V/W and ∼0.18 nW/Hz 1/2, respectively, measured in the far-field region at unbiased condition. Nevertheless, the estimated intrinsic voltage responsivity can achieve up to ∼5 kV/W with NEP of ∼2.6 pW/Hz 1/2 .