Cite
HARVARD Citation
Zhou, F. et al. (2016). A study of the interfacial resistive switching mechanism by proton exchange reactions on the SiOx layer. Physical chemistry chemical physics. 18 (2), pp. 700-703. [Online].
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Zhou, F. et al. (2016). A study of the interfacial resistive switching mechanism by proton exchange reactions on the SiOx layer. Physical chemistry chemical physics. 18 (2), pp. 700-703. [Online].