Temperature sensitivity analysis of dopingless charge-plasma transistor. (March 2016)

• Record Type: Journal Article
• Authors: Shrivastava, Vishwas; Kumar, Anup; Sahu, Chitrakant; Singh, Jawar
• Is Part Of: Solid-state electronics. Volume 117(2016)
• Page Start: 94
• Page End: 99
• Publication Date: 2016-03
• Subjects: Charge-plasma -- Doping-less -- Random dopant fluctuation (RDF) -- Sensitivity -- Simulation -- Variability; Semiconductors -- Periodicals; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.sse.2015.11.010
• Languages: English
• ISSNs: 0038-1101

Abstract

Abstract: The junctionless field-effect transistors (JLFETs) have shown potential to scale down in sub-10 nm regime due to simplified fabrication process and less short-channel effects (SCEs), however, sensitivity towards process parameter variation is a major concern. Therefore, in this paper, sensitivity towards temperature variation of recently proposed dopingless (DL) double-gate field-effect transistor (DGFET) and JL-DGFET is reported. Different digital and analog performance metrics were considered and compared for both devices of similar geometries. We observed that the drive current of DL-DGFET decreases with temperature, while, it increases in JL-DGFET because both devices are affected by different scattering mechanisms at higher temperature. The variation in I ON and I OFF in DL-DGFET are only 0.095 μ A/K and 0.2 nA / K, respectively, while, in JL-DGFET the changes are 0.25 μ A/K and 0.34 nA / K, respectively, above room temperature. Below room temperature, it was found that the incomplete ionization effect in JL-DGFET severely affects the drive current, however, DL-DGFET remains unaffected. Hence, the proposed DL-DGFET is less sensitive towards temperature variation and can be employed for cryogenics to high temperature applications.