Thin-films and transistors of p-ZnTe. (February 2016)

• Record Type: Journal Article
• Authors: Lastra, G.; Olivas, A.; Mejía, J.I.; Quevedo-López, M.A.
• Is Part Of: Solid-state electronics. Volume 116(2016)
• Page Start: 56
• Page End: 59
• Publication Date: 2016-02
• Subjects: ZnTe -- Thin-film transistors -- Pulsed-laser deposition -- Cu doping; Semiconductors -- Periodicals; Semiconducteurs -- Périodiques; 621.38152
• DOI: 10.1016/j.sse.2015.11.027
• Languages: English
• ISSNs: 0038-1101

Abstract

Highlights: ZnTe TFTs doped in 15 mg Cu solution showed linear and saturation regions. Maximum mobility was 10 −2 cm 2 /V s for TFTs with W / L = 40/20, 40, 80 and 80/20 μm. Drain-currents from 10 −8 to 10 −9 A at V G = 0 V were obtained in (35 nm) ZnTe TFT. Mobility in 75 nm p-ZnTe TFTs was higher than mobility in 35 nm p-ZnTe TFTs. Abstract: In this article, we report ( I DS – V DS ) characteristics of (75 and 35 nm) p-type ZnTe thin-film transistors (TFTs) at different active channels by photolithography. In 75 nm p-ZnTe TFTs, the source and drain contacts were doped with Cu in 11, 13 and 15 mg (Cu(NO3 )2 –3H2 O)/150 ml (H2 O) for 60 s and heated at 300 °C for 10 min. TFTs immersed in 15 mg solution showed the clearest linear and saturation regions, as well as an approximate mobility from 10 −2 to 10 −4 cm 2 /V s. Also, drain- currents ( I DS ) from 10 −8 to ∼10 −7 A were shown at V G = 0 V (OFF-state). However, drain-current in the OFF-state decreased in 35 nm p-ZnTe TFTs. The films showed the cubic phase and the Cu1.44 Te-like orthorhombic phase.