Adding a self-reset feature to the Bulk-BICS with dynamic storage cell. Issue 12 (December 2015)

• Record Type: Journal Article
• Authors: Simionovski, Alexandre; Wirth, Gilson
• Is Part Of: Microelectronics and reliability. Volume 55:Issue 12 Part B(2015)
• Page Start: 2748
• Page End: 2753
• Publication Date: 2015-12
• Subjects: Current sensor -- Bulk-BICS -- Dynamic storage -- Ionizing radiation -- Transient event detection -- Self reset -- Quiescent current consumption -- Recomputation state; Electronic apparatus and appliances -- Reliability -- Periodicals; Miniature electronic equipment -- Periodicals; Appareils électroniques -- Fiabilité -- Périodiques; Équipement électronique miniaturisé -- Périodiques; Electronic apparatus and appliances -- Reliability; Miniature electronic equipment; Periodicals; 621.3815
• DOI: 10.1016/j.microrel.2015.09.019
• Languages: English
• ISSNs: 0026-2714

Abstract

Abstract: This work presents a study of the effects of the leakage currents in the control transistors of a dynamic storage cell intended to be used with Bulk-BICS circuits. A means to introduce a controlled discharge current to the storage element is presented, making the dynamic storage cell stable in the reset-state at rest. This self-reset feature allows eliminating the recurrent reset pulse necessary in the previous version for stabilization of the memory cell. A reduction in the current consumption when the circuit is idle is also achieved with this technique.