Improvement of hydrogenated amorphous silicon germanium thin film solar cells by different p-type contact layer. (January 2016)

• Record Type: Journal Article
• Authors: Cho, Jaehyun; Pham, Duy Phong; Jung, Junhee; Shin, Chonghoon; Park, Jinjoo; Kim, Sangho; Tuan Le, Anh Huy; Park, Hyeongsik; Iftiquar, S.M.; Yi, Junsin
• Is Part Of: Materials science in semiconductor processing. Volume 41(2016:Jan.)
• Page Start: 480
• Page End: 484
• Publication Date: 2016-01
• Subjects: a-SiGe:H thin film solar cells -- Hydrogenated microcrystalline silicon oxide -- p-type contact layer; Semiconductors -- Periodicals; Integrated circuits -- Materials -- Periodicals; Semiconducteurs -- Périodiques; Circuits intégrés -- Matériaux -- Périodiques; Electronic journals; 621.38152
• DOI: 10.1016/j.mssp.2015.10.006
• Languages: English
• ISSNs: 1369-8001

Abstract

Abstract: In this study, we report an appreciably increased efficiency from 6% up to 9.1% of hydrogenated amorphous silicon germanium (a-SiGe:H) thin film solar cells by using a combination of different p-doped window layers, such as boron doped hydrogenated amorphous silicon (p-a-Si:H), amorphous silicon oxide (p-a-SiO x :H), microcrystalline silicon (p-µc-Si:H), and microcrystalline silicon oxide (p-µc-SiO x :H). Optoelectronic properties and the role of these p-layers in the enhancement of a-SiGe:H cell efficiency were also examined and discussed. An improvement of 1.62 mA/cm 2 in the short-circuit current density ( J sc ) is attributed to the higher band gap of p-type silicon oxide layers. In addition, an increase in open-circuit voltage ( V oc ) by 150 mV and fill factor (FF) by 6.93% is ascribed to significantly improved front TCO/p-layer interface contact.