Cite
MLA Citation
Genwang Cai et al.. “Al passivation effect at the HfO2/GaAs interface: A first-principles study.” Materials science in semiconductor processing, vol. 41, n.d., pp. 1–5. http://access.bl.uk/ark:/81055/vdc_100029835752.0x00001c
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Genwang Cai et al.. “Al passivation effect at the HfO2/GaAs interface: A first-principles study.” Materials science in semiconductor processing, vol. 41, n.d., pp. 1–5. http://access.bl.uk/ark:/81055/vdc_100029835752.0x00001c