Crossbar array of selector-less TaOx/TiO2 bilayer RRAM. Issue 11 (November 2015)

• Record Type: Journal Article
• Authors: Chou, Chun-Tse; Hudec, Boris; Hsu, Chung-Wei; Lai, Wei-Li; Chang, Chih-Cheng; Hou, Tuo-Hung
• Is Part Of: Microelectronics and reliability. Volume 55:Issue 11(2015)
• Page Start: 2220
• Page End: 2223
• Publication Date: 2015-11
• Subjects: RRAM -- Crossbar array -- Forming-free -- Self-rectifying -- Bilayer -- TiO2; Electronic apparatus and appliances -- Reliability -- Periodicals; Miniature electronic equipment -- Periodicals; Appareils électroniques -- Fiabilité -- Périodiques; Équipement électronique miniaturisé -- Périodiques; Electronic apparatus and appliances -- Reliability; Miniature electronic equipment; Periodicals; 621.3815
• DOI: 10.1016/j.microrel.2015.04.002
• Languages: English
• ISSNs: 0026-2714

Abstract

Graphical abstract: Abstract: In this work, we have implemented self-rectifying TaO x /TiO2 RRAM in a selector-less 6 × 6 crossbar array with various desiring features, including: (1) simple fabrication using only three masks, (2) high self-rectifying ratio up to 10 3 for sneak current suppression, (3) stable bipolar resistive-switching characteristics without the need for electro-forming and current compliance, (4) data retention time over 10 4 s, and (5) robust READ and WRITE disturb immunity. Finally, an achievable array size of 1 Mb was simulated using an All-LPU read scheme and a V/3 write scheme.