Gate leakage current suppression and reliability improvement for ultra-low EOT Ge MOS devices by suitable HfAlO/HfON thickness and sintering temperature. Issue 11 (November 2015)

• Record Type: Journal Article
• Authors: Chi, Wei-Fong; Chang-Liao, Kuei-Shu; Yi, Shih-Han; Li, Chen-Chien; Li, Yan-Lin
• Is Part Of: Microelectronics and reliability. Volume 55:Issue 11(2015)
• Page Start: 2183
• Page End: 2187
• Publication Date: 2015-11
• Subjects: Ge MOS -- High-k -- HfON -- HfAlO -- Sintering -- EOT; Electronic apparatus and appliances -- Reliability -- Periodicals; Miniature electronic equipment -- Periodicals; Appareils électroniques -- Fiabilité -- Périodiques; Équipement électronique miniaturisé -- Périodiques; Electronic apparatus and appliances -- Reliability; Miniature electronic equipment; Periodicals; 621.3815
• DOI: 10.1016/j.microrel.2015.08.015
• Languages: English
• ISSNs: 0026-2714

Abstract

Abstract: Ultra-low effective oxide thickness (EOT) Ge MOS devices with different HfAlO/HfON stacks and sintering temperatures are investigated in this work. The suppression of gate leakage current and improvement of reliability properties can be achieved by either stacked gate dielectrics or a low sintering temperature. Especially, the qualities of the interface and high-k gate dielectric in Ge devices are significantly improved through a low sintering temperature. A 0.5 nm HfAlO/2.5 nm HfON gate stack and a sintering temperature at 350 °C are the suitable conditions to achieve low EOT, gate leakage, and good reliability for Ge MOS devices.