Cite
HARVARD Citation
Qu, D. et al. (2015). Self-screened high performance multi-layer MoS2 transistor formed by using a bottom graphene electrode. Nanoscale. 7 (45), pp. 19273-19281. [Online].
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Qu, D. et al. (2015). Self-screened high performance multi-layer MoS2 transistor formed by using a bottom graphene electrode. Nanoscale. 7 (45), pp. 19273-19281. [Online].