Self-screened high performance multi-layer MoS2 transistor formed by using a bottom graphene electrode. Issue 45 (4th November 2015)

• Record Type: Journal Article
• Authors: Qu, Deshun; Liu, Xiaochi; Ahmed, Faisal; Lee, Daeyeong; Yoo, Won Jong
• Is Part Of: Nanoscale. Volume 7:Issue 45(2015)
• Page Start: 19273
• Page End: 19281
• Publication Date: 2015-11-04
• Subjects: Nanoscience -- Periodicals; Nanotechnology -- Periodicals; 620.505
• DOI: 10.1039/c5nr06076a
• Languages: English
• ISSNs: 2040-3364

Abstract

Abstract : Investigating the carrier transport mechanism in a multi-layer MoS2 and high performance MoS2 FET enabled by a bottom graphene contact. Abstract : We investigated the carrier transport in multi-layer MoS2 with consideration of the contact resistance ( R c ) and interlayer resistance ( R int ). A bottom graphene contact was suggested to overcome the degradation of I d modulation in a back gated multi-layer MoS2 field effect transistor (FET) due to the accumulated R int and increased R c with increasing thickness. As a result, non-degraded drain current ( I d ) modulation with increasing flake thickness was achieved due to the non-cumulative R int . Benefiting from the low R c induced by the negligible Schottky barrier at the graphene/MoS2 interface, the intrinsic carrier transport properties immune to R c were investigated in the multi-layer MoS2 FET. ∼2 times the enhanced carrier mobility was attained from the self-screened channel in the bottom graphene contacted device, compared to those with top metal contacts.