Cite
HARVARD Citation
Park, H. et al. (2016). Extremely Low Contact Resistance on Graphene through n‐Type Doping and Edge Contact Design. Advanced materials. 28 (5), pp. 864-870. [Online].
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Park, H. et al. (2016). Extremely Low Contact Resistance on Graphene through n‐Type Doping and Edge Contact Design. Advanced materials. 28 (5), pp. 864-870. [Online].