Extremely Low Contact Resistance on Graphene through n‐Type Doping and Edge Contact Design. Issue 5 (30th November 2015)

• Record Type: Journal Article
• Authors: Park, Hyung‐Youl; Jung, Woo‐Shik; Kang, Dong‐Ho; Jeon, Jaeho; Yoo, Gwangwe; Park, Yongkook; Lee, Jinhee; Jang, Yun Hee; Lee, Jaeho; Park, Seongjun; Yu, Hyun‐Yong; Shin, Byungha; Lee, Sungjoo; Park, Jin‐Hong
• Is Part Of: Advanced materials. Volume 28:Issue 5(2016)
• Page Start: 864
• Page End: 870
• Publication Date: 2015-11-30
• Subjects: contact resistance -- doping -- edge contact -- graphene -- optoelectronic devices; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.201503715
• Languages: English
• ISSNs: 0935-9648

Abstract

Abstract : The effects of graphene n‐doping on a metal–graphene contact are studied in combination with 1D edge contacts, presenting a record contact resistance of 23 Ω μm at room temperature (19 Ω μm at 100 K). This contact scheme is applied to a graphene–perovskite hybrid photodetector, significantly improving its performance (0.6 → 1.8 A W −1 in photoresponsivity and 3.3 × 10 4 → 5.4 × 10 4 Jones in detectivity).