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Highly transparent low resistance Ga doped ZnO/Cu grid double layers prepared at room temperature*Project supported by the Key Project of the National Natural Science Foundation of China (No. 91333203), the Program for Innovative Research Team in University of Ministry of Education of China (No. IRT13037), the National Natural Science Foundation of China (No. 51172204), and the Zhejiang Provincial Department of Science and Technology of China (No. 2010R50020). (December 2015)
Record Type:
Journal Article
Title:
Highly transparent low resistance Ga doped ZnO/Cu grid double layers prepared at room temperature*Project supported by the Key Project of the National Natural Science Foundation of China (No. 91333203), the Program for Innovative Research Team in University of Ministry of Education of China (No. IRT13037), the National Natural Science Foundation of China (No. 51172204), and the Zhejiang Provincial Department of Science and Technology of China (No. 2010R50020). (December 2015)
Main Title:
Highly transparent low resistance Ga doped ZnO/Cu grid double layers prepared at room temperature*Project supported by the Key Project of the National Natural Science Foundation of China (No. 91333203), the Program for Innovative Research Team in University of Ministry of Education of China (No. IRT13037), the National Natural Science Foundation of China (No. 51172204), and the Zhejiang Provincial Department of Science and Technology of China (No. 2010R50020).
Abstract: Ga doped ZnO (GZO)/Cu grid double layer structures were prepared at room temperature (RT). We have studied the electrical and optical characteristics of the GZO/Cu grid double layer as a function of the Cu grid spacing distance. The optical transmittance and sheet resistance of the GZO/Cu grid double layer are higher than that of the GZO/Cu film double layer regardless of the Cu grid spacing distance and increase as the Cu grid spacing distance increases. The calculated values for the transmittance and sheet resistance of the GZO/Cu grid double layer well follow the trend of the experimentally observed transmittance and sheet resistance ones. For the GZO/Cu grid double layer with a Cu grid spacing distance of 1 mm, the highest figure of merit ( Φ TC = 6.19 × 10 −3 Ω −1 ) was obtained. In this case, the transmittance, resistivity and filling factor (FF) of the GZO/Cu grid double layer are 83.74%, 1.10 × 10 −4 Ω·cm and 0.173, respectively.