Properties of n-type SnO2 semiconductor prepared by spray ultrasonic technique for photovoltaic applications. (December 2015)

• Record Type: Journal Article
• Authors: Bendjedidi, H.; Attaf, A.; Saidi, H.; Aida, M. S.; Semmari, S.; Bouhdjar, A.; Benkhetta, Y.
• Is Part Of: Journal of semiconductors. Volume 36:Number 12(2015:Dec.)
• Publication Date: 2015-12
• Subjects: 2520; tin oxide -- thin films -- spray ultrasonic -- structural properties -- optical properties; Semiconductors -- Periodicals; 621.38152
• DOI: 10.1088/1674-4926/36/12/123002
• Languages: English
• ISSNs: 1674-4926

Abstract

Abstract: Transparent conducting n-type SnO2 semiconductor films were fabricated by employing an inexpensive, simplified spray ultrasonic technique using an ultrasonic generator at deferent substrate temperatures (300, 350, 400, 450 and 500 °C). The structural studies reveal that the SnO2 films are polycrystalline at 350, 400, 450, 500 °C with preferential orientation along the (200) and (101) planes, and amorphous at 300 °C. The crystallite size of the films was found to be in the range of 20.9–72.2 nm. The optical transmittance in the visible range and the optical band gap are 80% and 3.9 eV respectively. The films thicknesses were varied between 466 and 1840 nm. The resistivity was found between 1.6 and 4 × 10 −2 Ω·cm. This simplified ultrasonic spray technique may be considered as a promising alternative to a conventional spray for the massive production of economic SnO2 films for solar cells, sensors and opto-electronic applications.