Bandgap-engineered GaAsSb alloy nanowires for near-infrared photodetection at 1.31 μm. (October 2015)

• Record Type: Journal Article
• Authors: Ma, Liang; Zhang, Xuehong; Li, Honglai; Tan, Huang; Yang, Yankun; Xu, Yadan; Hu, Wei; Zhu, Xiaoli; Zhuang, Xiujuan; Pan, Anlian
• Is Part Of: Semiconductor science and technology. Volume 30:Number 10(2015:Oct.)
• Page Start: 1214
• Page End: 1220
• Publication Date: 2015-10
• Subjects: Semiconductors -- Periodicals; 621.38152
• DOI: 10.1088/0268-1242/30/10/105033
• Languages: English
• ISSNs: 0268-1242

Abstract

<abstract> <title>Abstract</title> <p>Single-nanowire photodetectors have potential applications in integrated optoelectronic devices and systems. Here, bandgap-engineered GaAs_0.26Sb_0.74 alloy nanowires were synthesized via a chemical vapor deposition method. The synthesized nanowires are single crystals grown along the [111]_B direction with length up to 50 <italic>μ</italic>m and diameter ranging from 40 to 500 nm. Photodetectors are built based on these single-alloy nanowires, which show a wide response in the near-infrared region with a high response peak located in the optical communication region (1.31 <italic>μ</italic>m), as well as an external quantum efficiency of 1.62 × 10⁵%, a responsivity of 1.7 × 10³ A W⁻¹ and a short response time of 60 ms. These novel near-infrared photodetectors may find promising potential applications in integrated infrared photodetection, thermal imaging, information communication and processing.</p> </abstract>