Impact of Band-Engineering to Performance of High-k Multilayer Based Charge Trapping Memory*Supported by the National Basic Research Program of China under Grant No 2011CBA00602, and the National Key Scientific and Technological Project under Grant No 2013ZX01032001-001-003. (August 2015)

• Record Type: Journal Article
• Authors: Liu, Li-Fang; Pan, Li-Yang; Zhang, Zhi-Gang; Xu, Jun
• Is Part Of: Chinese physics letters. Volume 32:Number 8(2015:Aug.)
• Page Start: 489
• Publication Date: 2015-08
• Subjects: Physics -- Periodicals; Electronic journals; 530.05
• DOI: 10.1088/0256-307X/32/8/088501
• Languages: English
• ISSNs: 0256-307X

Abstract

<abstract> <title> <x content-type="archive" xml:space="preserve">Abstract</x> </title> <p>Impact of band-engineering to the performance of charge trapping memory with HfO₂/Ta₂O₅/HfO₂ (HTH) as the charge trapping layer is investigated. Compared with devices with the same total HfO₂ thickness, structures with Ta₂O₅ closer to substrates show larger program/erase window, because the 2nd HfO₂ (next to blocking oxide) serving as part of blocking oxide reduces the current tunneling out of/in the charge trapping layer during program and erase. Moreover, trapped charge centroid is modulated and contributed more to the flat-band voltage shift. Further experiments prove that devices with a thicker 2nd HfO₂ layer exhibit larger saturate flat-band shift in both program and erase operation. The optimized device achieves a 7 V memory window and good reliability characteristics.</p> </abstract>