Chemical and electrical properties of (NH4)2S passivated GaSb surface*Project supported by the National Natural Science Foundation of China (No. 61474104). (July 2015)

• Record Type: Journal Article
• Authors: Tao, Dongyan; Cheng, Yu; Liu, Jingming; Su, Jie; Liu, Tong; Yang, Fengyun; Wang, Fenghua; Cao, Kewei; Dong, Zhiyuan; Zhao, Youwen
• Is Part Of: Journal of semiconductors. Volume 36:Number 7(2015:Jul.)
• Page Start: 892
• Publication Date: 2015-07
• Subjects: Semiconductors -- Periodicals; 621.38152
• DOI: 10.1088/1674-4926/36/7/073006
• Languages: English
• ISSNs: 1674-4926

Abstract

<abstract> <title>Abstract</title> <p>The surface chemical properties of gallium antimonide (GaSb) after ammonium sulfide ((NH₄)₂S) solution passivation have been studied by X-ray photoelectron spectroscopy (XPS), time of flight secondary ion mass spectroscopy (TOF-SIMS) and <italic>I–V</italic> measurement. An advantage of neutral (NH₄)₂S + S solution over pure (NH₄)₂S solution and alkaline (NH₄)₂S + S solution has been found in the ability to passivate the GaSb surface by contrast and comparison. It has been found that alkaline (NH₄)₂S + S solution passivation effectively removes oxides of the GaSb surface and forms sulfide products to improve device performance. TOF-SIMS complementally demonstrates that pure (NH₄)₂S passivation did form sulfide products, which are too soluble to really exist. The lowest roughness determined using a 3D optical profilometer and the highest improved SBD quality proved that neutral (NH₄)₂S + S solution passivation worked much better in improving the surface properties of GaSb.</p> </abstract>