A 0.75 dB NF LNA in GaAs pHEMT utilizing gate–drain capacitance and gradual inductor*Project supported by the External Cooperation Program of BIC, Chinese Academy of Sciences (No. 172511KYSB20130108). (July 2015)

• Record Type: Journal Article
• Authors: Wang, Shuo; Zheng, Xinnian; Yang, Hao; Zhang, Haiying
• Is Part Of: Journal of semiconductors. Volume 36:Number 7(2015:Jul.)
• Page Start: 1
• Publication Date: 2015-07
• Subjects: Semiconductors -- Periodicals; 621.38152
• DOI: 10.1088/1674-4926/36/7/075001
• Languages: English
• ISSNs: 1674-4926

Abstract

<abstract> <title>Abstract</title> <p>A two-stage monolithic microwave integrated circuit (MMIC) low noise amplifier (LNA) fabricated in 0.5 <italic>μ</italic>m GaAs pHEMT is presented. The Miller effect introduced by the parasitic gate–drain capacitance is utilized to decrease the value of the input inductor. Additionally, the input on-chip inductor is a novel high <italic>Q</italic> gradual structure. The noise figure is reduced with these two methods. With good input and output matching, the LNA achieves a noise figure of 0.75 dB and a small signal gain of 32.7 dB over 698–806 MHz. The input 1 dB compression point is −21.8 dBm and the input third order interception point is −10 dBm.</p> </abstract>