Local strain and defects in silicon wafers due to nanoindentation revealed by full‐field X‐ray microdiffraction imaging. (25th June 2015)

• Record Type: Journal Article
• Authors: Li, Z. J.; Danilewsky, A. N.; Helfen, L.; Mikulik, P.; Haenschke, D.; Wittge, J.; Allen, D.; McNally, P.; Baumbach, T.
• Is Part Of: Journal of synchrotron radiation. Volume 22:Part 4(2015)
• Page Start: 1083
• Page End: 1090
• Publication Date: 2015-06-25
• Subjects: Synchrotron radiation -- Periodicals; Free electron lasers -- Periodicals; 539.73505
• DOI: 10.1107/S1600577515009650
• Languages: English
• ISSNs: 0909-0495

Abstract

<abstract abstract-type="main" xml:lang="en"> <title> <x xml:space="preserve">Abstract</x> </title> <p>Quantitative characterization of local strain in silicon wafers is critical in view of issues such as wafer handling during manufacturing and strain engineering. In this work, full‐field X‐ray microdiffraction imaging using synchrotron radiation is employed to investigate the long‐range distribution of strain fields in silicon wafers induced by indents under different conditions in order to simulate wafer fabrication damage. The technique provides a detailed quantitative mapping of strain and defect characterization at the micrometer spatial resolution and holds some advantages over conventional methods.</p> </abstract>