A Ku-band wide-tuning-range high-output-power VCO in InGaP/GaAs HBT technology*Project supported by the National Basic Research Program of China (No. 2010CBxxxx05), the Advance Research Project of China (No. 51308xxxx06), the Advance Research Foundation of China (No. 9140A08xxxx11DZ111), and Doctoral Scientific Research Foundation of Henan University of Science and Technology (No. 400613480011), and the Foundation of He'nan Educational Commettee (No. 15A510001). (June 2015)

• Record Type: Journal Article
• Authors: Zhang, Jincan; Zhang, Yuming; Lü, Hongliang; Zhang, Yimen; Liu, Bo; Zhang, Leiming; Xiang, Fei
• Is Part Of: Journal of semiconductors. Volume 36:Number 6(2015:Jun.)
• Page Start: 86
• Publication Date: 2015-06
• Subjects: Semiconductors -- Periodicals; 621.38152
• DOI: 10.1088/1674-4926/36/6/065010
• Languages: English
• ISSNs: 1674-4926

Abstract

<abstract> <title>Abstract</title> <p>A fully integrated Ku-band voltage controlled oscillator (VCO) is presented in an InGaP/GaAs heterojunction bipolar transistor (HBT) technology. To achieve the wide tuning range (TR), the VCO employs a Colpitts configuration, and the VCO simultaneously achieves high output power. The implemented VCO demonstrates an oscillation frequency range from 12.82 to 14.97 GHz, a frequency TR of 15.47%, an output power from 0.31 to 6.46 dBm, and a phase noise of −94.9 dBc/Hz at 1 MHz offset from 13.9 GHz center frequency. The VCO consumes 52.75 mW from 5 V supply and occupies an area of 0.81 × 0.78 mm². Finally, the figures-of-merit for VCOs is discussed.</p> </abstract>