Propagation delay and power dissipation for different aspect ratio of single-walled carbon nanotube bundled TSV. (June 2015)

• Record Type: Journal Article
• Authors: Goyal, Tanu; Majumder, Manoj Kumar; Kaushik, Brajesh Kumar
• Is Part Of: Journal of semiconductors. Volume 36:Number 6(2015:Jun.)
• Page Start: 154
• Publication Date: 2015-06
• Subjects: Semiconductors -- Periodicals; 621.38152
• DOI: 10.1088/1674-4926/36/6/065001
• Languages: English
• ISSNs: 1674-4926

Abstract

<abstract> <title>Abstract</title> <p>Through-silicon vias (TSVs) have provided an attractive solution for three-dimensional (3D) integrated devices and circuit technologies with reduced parasitic losses and power dissipation, higher input-output (I/O) density and improved system performance. This paper investigates the propagation delay and average power dissipation of single-walled carbon nanotube bundled TSVs having different via radius and height. Depending on the physical configuration, a comprehensive and accurate analytical model of CNT bundled TSV is employed to represent the via (vertical interconnect access) line of a driver-TSV-load (DTL) system. The via radius and height are used to estimate the bundle aspect ratio (AR) and the cross-sectional area. For a fixed via height, the delay and the power dissipation are reduced up to 96.2% using a SWCNT bundled TSV with AR = 300 : 1 in comparison to AR = 6 : 1.</p> </abstract>