Thin silicon layer SOI power device with linearly-distance fixed charge islands*Project supported by the Guangxi Natural Science Foundation of China (No. 2013GXNSFAA019335), the Guangxi Department of Education Project (No.201202ZD041), the China Postdoctoral Science Foundation Project (Nos. 2012M521127, 2013T60566), and the National Natural Science Foundation of China (Nos. 61361011, 61274077, 61464003). (May 2015)

• Record Type: Journal Article
• Authors: Zuo, Yuan; Li, Haiou; Zhai, Jianghui; Tang, Ning; Song, Shuxiang; Li, Qi
• Is Part Of: Journal of semiconductors. Volume 36:Number 5(2015:May)
• Page Start: 1568
• Publication Date: 2015-05
• Subjects: Semiconductors -- Periodicals; 621.38152
• DOI: 10.1088/1674-4926/36/5/054005
• Languages: English
• ISSNs: 1674-4926

Abstract

<abstract> <title>Abstract</title> <p>A new high-voltage LDMOS with linearly-distanced fixed charge islands is proposed (LFI LDMOS). A lot of linearly-distanced fixed charge islands are introduced by implanting the Cs or I ion into the buried oxide layer and dynamic holes are attracted and accumulated, which is crucial to enhance the electric field of the buried oxide and the vertical breakdown voltage. The surface electric field is improved by increasing the distance between two adjacent fixed charge islands from source to drain, which lead to the higher concentration of the drift region and a lower on-resistance. The numerical results indicate that the breakdown voltage of 500 V with <italic>L</italic>_d = 45 μm is obtained in the proposed device in comparison to 209 V of conventional LDMOS, while maintaining low on-resistance.</p> </abstract>