A 2-D semi-analytical model of double-gate tunnel field-effect transistor*Project supported by the National Natural Science Foundation of China (No. 61376106) and the Graduate Innovation Fund of Anhui University. (May 2015)

• Record Type: Journal Article
• Authors: Xu, Huifang; Dai, Yuehua; Li, Ning; Xu, Jianbin
• Is Part Of: Journal of semiconductors. Volume 36:Number 5(2015:May)
• Page Start: 827
• Publication Date: 2015-05
• Subjects: Semiconductors -- Periodicals; 621.38152
• DOI: 10.1088/1674-4926/36/5/054002
• Languages: English
• ISSNs: 1674-4926

Abstract

<abstract> <title>Abstract</title> <p>A 2-D semi-analytical model of double gate (DG) tunneling field-effect transistor (TFET) is proposed. By aid of introducing two rectangular sources located in the gate dielectric layer and the channel, the 2-D Poisson equation is solved by using a semi-analytical method combined with an eigenfunction expansion method. The expression of the surface potential is obtained, which is a special function for the infinite series expressions. The influence of the mobile charges on the potential profile is taken into account in the proposed model. On the basis of the potential profile, the shortest tunneling length and the average electrical field can be derived, and the drain current is then constructed by using Kane's model. In particular, the changes of the tunneling parameters <italic>A</italic>_{<italic>k</italic>} and <italic>B</italic>_{<italic>k</italic>} influenced by the drain—source voltage are also incorporated in the predicted model. The proposed model shows a good agreement with TCAD simulation results under different drain—source voltages, silicon film thicknesses, gate dielectric layer thicknesses, and gate dielectric layer constants. Therefore, it is useful to optimize the DG TFET and this provides a physical insight for circuit level design.</p> </abstract>