Cite
HARVARD Citation
Li, Y. et al. (2015). Solution-processed indium-zinc-oxide thin-film transistors based on anodized aluminum oxide gate insulator modified with zirconium oxide. RSC advances. 5 (63), pp. 51440-51445. [Online].
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Li, Y. et al. (2015). Solution-processed indium-zinc-oxide thin-film transistors based on anodized aluminum oxide gate insulator modified with zirconium oxide. RSC advances. 5 (63), pp. 51440-51445. [Online].