Solution-processed indium-zinc-oxide thin-film transistors based on anodized aluminum oxide gate insulator modified with zirconium oxide. Issue 63 (10th July 2015)

Record Type:: Journal Article
Title:: Solution-processed indium-zinc-oxide thin-film transistors based on anodized aluminum oxide gate insulator modified with zirconium oxide. Issue 63 (10th July 2015)
Main Title:: Solution-processed indium-zinc-oxide thin-film transistors based on anodized aluminum oxide gate insulator modified with zirconium oxide
Authors:: Li, Yuzhi
Lan, Linfeng
Xiao, Peng
Lin, Zhenguo
Sun, Sheng
Song, Wei
Song, Erlong
Gao, Peixiong
Wang, Dan
Ning, Honglong
Peng, Junbiao
Abstract:: <abstract abstract-type="toc"> <title> <x xml:space="preserve">Abstract</x> </title> <p> <graphic position="anchor" id="ga" xlink:href="ark:/27927/pgj105mddm1" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" />Enhanced performance of solution-processed IZO-TFTs with ZrO<sub><italic>x</italic></sub> interlayer due to Al diffusion suppression.</p> </abstract>
Is Part Of:: RSC advances. Volume 5:Issue 63(2015)
Journal:: RSC advances
Issue:: Volume 5:Issue 63(2015)
Issue Display:: Volume 5, Issue 63 (2015)
Year:: 2015
Volume:: 5
Issue:: 63
Issue Sort Value:: 2015-0005-0063-0000
Page Start:: 51440
Page End:: 51445
Publication Date:: 2015-07-10
Subjects:: Chemistry -- Periodicals
540.5
Journal URLs:: http://pubs.rsc.org/en/Journals/JournalIssues/RA ↗
http://www.rsc.org/ ↗
DOI:: 10.1039/c5ra09435f ↗
Languages:: English
ISSNs:: 2046-2069
Deposit Type:: Legaldeposit
View Content:: Available online (eLD content is only available in our Reading Rooms) ↗
Physical Locations:: British Library DSC - 8036.750300
British Library DSC - BLDSS-3PM
British Library STI - ELD Digital store
Ingest File:: 3301.xml