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APA Citation
Garbe, V., Abendroth, B., Stöcker, H., Gavrilov, A., Cohen‐Elias, D., Mehari, S., Ritter, D., & Meyer, D. C. (n.d.). oxygen and hydrogen profiles and electrical properties of unintentionally doped gallium nitride grown by hydride vapor phase epitaxy. Crystal research and technology, 50(6), 425–431. http://access.bl.uk/ark:/81055/vdc_100025914438.0x000020