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HARVARD Citation
Bisi, D. et al. (n.d.). Trapping mechanisms in GaN‐based MIS‐HEMTs grown on silicon substrate. Physica status solidi. 212 (5), pp. 1122-1129. [Online].
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Bisi, D. et al. (n.d.). Trapping mechanisms in GaN‐based MIS‐HEMTs grown on silicon substrate. Physica status solidi. 212 (5), pp. 1122-1129. [Online].