Analysis and optimization of TSV–TSV coupling in three-dimensional integrated circuits*Project supported by the National Natural Science Foundation of China (No. 61334003). (April 2015)

• Record Type: Journal Article
• Authors: Zhao, Yingbo; Dong, Gang; Yang, Yintang
• Is Part Of: Journal of semiconductors. Volume 36:Number 4(2015:Apr.)
• Page Start: 922
• Publication Date: 2015-04
• Subjects: Semiconductors -- Periodicals; 621.38152
• DOI: 10.1088/1674-4926/36/4/045011
• Languages: English
• ISSNs: 1674-4926

Abstract

<abstract> <title>Abstract</title> <p>Through silicon via (TSV)–TSV coupling is detrimental to the performance of three-dimensional (3D) integrated circuits (ICs) with the major negative effect of introducing coupling noise. In order to obtain an accurate estimation of the coupling level from TSV–TSV in the early design stage, this paper first proposes an impedance-level model of the coupling channel between TSVs based on a two-port network, and then derives the formula of the coupling coefficient to describe the TSV–TSV coupling effect. The accuracy of the formula is validated by comparing the results with 3D full-wave simulations. Furthermore, a design technique for optimizing the coupling between adjacent coupled signal TSVs is proposed. Through SPICE simulations, the proposed technique shows its feasibility to reduce the coupling noise for both a simple TSV–TSV circuit and a complicated circuit with more TSVs, and demonstrates its potential for designers in achieving the goal of improving the electrical performance of 3D ICs.</p> </abstract>