TiS3 Transistors with Tailored Morphology and Electrical Properties. (13th March 2015)

• Record Type: Journal Article
• Authors: Island, Joshua O.; Barawi, Mariam; Biele, Robert; Almazán, Adrián; Clamagirand, José M.; Ares, José R.; Sánchez, Carlos; van der Zant, Herre S. J.; Álvarez, José V.; D'Agosta, Roberto; Ferrer, Isabel J.; Castellanos‐Gomez, Andres
• Is Part Of: Advanced materials. Volume 27:Number 16(2015)
• Page Start: 2595
• Page End: 2601
• Publication Date: 2015-03-13
• Subjects: Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.201405632
• Languages: English
• ISSNs: 0935-9648

Abstract

<abstract abstract-type="graphical" xml:lang="en" id="adma201405632-abs-0001"> <title> <x xml:space="preserve">Abstract</x> </title> <p> <bold>Control over the morphology of TiS</bold> ₃ is demonstrated by synthesizing 1D nanoribbons and 2D nanosheets. The nanosheets can be exfoliated down to a single layer. Through extensive characterization of the two morphologies, differences in the electronic properties are found and attributed to a higher density of sulphur vacancies in nanosheets, which, according to density functional theory calculations, leads to an n‐type doping. <boxed-text content-type="graphic" position="anchor" orientation="portrait"><graphic position="anchor" mimetype="image" xlink:href="ark:/27927/pgjjm88rc5" orientation="portrait" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /></boxed-text></p> </abstract>