TiS3 Transistors with Tailored Morphology and Electrical Properties. (13th March 2015) - Island, Joshua O.
Abstract Control over the morphology of TiS 3 is demonstrated by synthesizing 1D nanoribbons and 2D nanosheets. The nanosheets can be exfoliated down to a single layer. Through extensive characterization of the two morphologies, differences in the electronic properties are found and attributed to a higher density of sulphur vacancies in nanosheets, which, according to density functional theory calculations, leads to an n‐type doping.