Cite
HARVARD Citation
Sun, S. et al. (2015). Flexible organic field-effect transistors with high-reliability gate insulators prepared by a room-temperature, electrochemical-oxidation process. RSC advances. 5 (20), pp. 15695-15699. [Online].
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Sun, S. et al. (2015). Flexible organic field-effect transistors with high-reliability gate insulators prepared by a room-temperature, electrochemical-oxidation process. RSC advances. 5 (20), pp. 15695-15699. [Online].