Flexible organic field-effect transistors with high-reliability gate insulators prepared by a room-temperature, electrochemical-oxidation process. Issue 20 (6th March 2015)
- Record Type:
- Journal Article
- Title:
- Flexible organic field-effect transistors with high-reliability gate insulators prepared by a room-temperature, electrochemical-oxidation process. Issue 20 (6th March 2015)
- Main Title:
- Flexible organic field-effect transistors with high-reliability gate insulators prepared by a room-temperature, electrochemical-oxidation process
- Authors:
- Sun, Sheng
Lan, Linfeng
Xiao, Peng
Lin, Zhenguo
Xu, Hua
Xu, Miao
Peng, Junbiao - Abstract:
- <abstract abstract-type="toc"> <title> <x xml:space="preserve">Abstract</x> </title> <p> <graphic position="anchor" id="ga" xlink:href="ark:/27927/pgh3xs463s1" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" />Flexible OFETs with electrochemically oxidized gate insulators (AlO<sub><italic>x</italic></sub>:Nd) covered by a thin layer of Cytop were fabricated on a PEN substrate. The device exhibited higher mobility and better electrical stability.</p> </abstract>
- Is Part Of:
- RSC advances. Volume 5:Issue 20(2015)
- Journal:
- RSC advances
- Issue:
- Volume 5:Issue 20(2015)
- Issue Display:
- Volume 5, Issue 20 (2015)
- Year:
- 2015
- Volume:
- 5
- Issue:
- 20
- Issue Sort Value:
- 2015-0005-0020-0000
- Page Start:
- 15695
- Page End:
- 15699
- Publication Date:
- 2015-03-06
- Subjects:
- Chemistry -- Periodicals
540.5 - Journal URLs:
- http://pubs.rsc.org/en/Journals/JournalIssues/RA ↗
http://www.rsc.org/ ↗ - DOI:
- 10.1039/c4ra16409a ↗
- Languages:
- English
- ISSNs:
- 2046-2069
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - 8036.750300
British Library DSC - BLDSS-3PM
British Library STI - ELD Digital store - Ingest File:
- 3506.xml