High Efficiency Cu2ZnSn(S, Se)4 Solar Cells by Applying a Double In2S3/CdS Emitter. (25th August 2014)

• Record Type: Journal Article
• Authors: Kim, Jeehwan; Hiroi, Homare; Todorov, Teodor K.; Gunawan, Oki; Kuwahara, Masaru; Gokmen, Tayfun; Nair, Dhruv; Hopstaken, Marinus; Shin, Byungha; Lee, Yun Seog; Wang, Wei; Sugimoto, Hiroki; Mitzi, David B.
• Is Part Of: Advanced materials. Volume 26:Number 44(2014)
• Page Start: 7427
• Page End: 7431
• Publication Date: 2014-08-25
• Subjects: Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.201402373
• Languages: English
• ISSNs: 0935-9648

Abstract

<abstract abstract-type="graphical" xml:lang="en" id="adma201402373-abs-0001"> <title> <x xml:space="preserve">Abstract</x> </title> <p> <bold>High‐efficiency Cu₂ZnSn(S, Se)₄ solar cells</bold> are reported by applying In₂S₃/CdS double emitters. This new structure offers a high doping concentration within the Cu₂ZnSn(S, Se)₄ solar cells, resulting in a substantial enhancement in open‐circuit voltage. The 12.4% device is obtained with a record open‐circuit voltage deficit of 593 mV. <boxed-text content-type="graphic" position="anchor" orientation="portrait"><graphic position="anchor" mimetype="image" xlink:href="ark:/27927/pgh2cn0tf0b" orientation="portrait" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /></boxed-text></p> </abstract>