High Efficiency Cu2ZnSn(S, Se)4 Solar Cells by Applying a Double In2S3/CdS Emitter. (25th August 2014) - Kim, Jeehwan
Abstract High‐efficiency Cu2ZnSn(S, Se)4 solar cells are reported by applying In2S3/CdS double emitters. This new structure offers a high doping concentration within the Cu2ZnSn(S, Se)4 solar cells, resulting in a substantial enhancement in open‐circuit voltage. The 12.4% device is obtained with a record open‐circuit voltage deficit of 593 mV.