Comparison of interfacial and electrical properties between Al2O3 and ZnO as interface passivation layer of GaAs MOS device with HfTiO gate dielectric*Project supported by the National Natural Science Foundation of China (Nos. 61176100, 61274112). (March 2015)

• Record Type: Journal Article
• Authors: Zhu, Shuyan; Xu, Jingping; Wang, Lisheng; Huang, Yuan; Tang, Wing Man
• Is Part Of: Journal of semiconductors. Volume 36:Number 3(2015:Mar.)
• Page Start: 1897
• Publication Date: 2015-03
• Subjects: Semiconductors -- Periodicals; 621.38152
• DOI: 10.1088/1674-4926/36/3/034006
• Languages: English
• ISSNs: 1674-4926

Abstract

<abstract> <title>Abstract</title> <p>GaAs metal-oxide-semiconductor (MOS) capacitors with HfTiO as the gate dielectric and Al₂O₃ or ZnO as the interface passivation layer (IPL) are fabricated. X-ray photoelectron spectroscopy reveals that the Al₂O₃ IPL is more effective in suppressing the formation of native oxides and As diffusion than the ZnO IPL. Consequently, experimental results show that the device with Al₂O₃ IPL exhibits better interfacial and electrical properties than the device with ZnO IPL: lower interface-state density (7.2 × 10¹² eV⁻¹ cm⁻²), lower leakage current density (3.60 × 10⁻⁷ A/cm² at <italic>V</italic>_g = 1 V) and good <italic>C−V</italic> behavior.</p> </abstract>