Cite
HARVARD Citation
Martin, D. et al. (2014). Ferroelectricity in Si‐Doped HfO2 Revealed: A Binary Lead‐Free Ferroelectric. Advanced materials. pp. 8198-8202. [Online].
This is an interim version of our Electronic Legal Deposit Catalogue-eJournals and eBooks while we continue to recover from a cyber-attack.
Martin, D. et al. (2014). Ferroelectricity in Si‐Doped HfO2 Revealed: A Binary Lead‐Free Ferroelectric. Advanced materials. pp. 8198-8202. [Online].