Ferroelectricity in Si‐Doped HfO2 Revealed: A Binary Lead‐Free Ferroelectric. (28th October 2014)

• Record Type: Journal Article
• Authors: Martin, Dominik; Müller, Johannes; Schenk, Tony; Arruda, Thomas M.; Kumar, Amit; Strelcov, Evgheni; Yurchuk, Ekaterina; Müller, Stefan; Pohl, Darius; Schröder, Uwe; Kalinin, Sergei V.; Mikolajick, Thomas
• Is Part Of: Advanced materials. Volume 26:Number 48(2014)
• Page Start: 8198
• Page End: 8202
• Publication Date: 2014-10-28
• Subjects: Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.201403115
• Languages: English
• ISSNs: 0935-9648

Abstract

<abstract abstract-type="graphical" xml:lang="en" id="adma201403115-abs-0001"> <title> <x xml:space="preserve">Abstract</x> </title> <p> <bold>Static domain structures and polarization dynamics</bold> of silicon doped HfO₂ are explored. The evolution of ferroelectricity as a function of Si‐doping level driving the transition from paraelectricity via ferroelectricity to antiferroelectricity is investigated. Ferroelectric and antiferroelectric properties can be observed locally on the pristine, poled and electroded surfaces, providing conclusive evidence to intrinsic ferroic behavior. <boxed-text content-type="graphic" position="anchor" orientation="portrait"><graphic position="anchor" mimetype="image" xlink:href="ark:/27927/pgh2t46k395" orientation="portrait" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /></boxed-text></p> </abstract>