Interface structure and wetting behaviour of Cu/Ti3SiC2 system. (January 2015)

• Record Type: Journal Article
• Authors: Lu, J. R.; Zhou, Y.; Zheng, Y.; Li, H. Y.; Li, S. B.
• Is Part Of: Advances in applied ceramics. Volume 114:Number 1(2015)
• Page Start: 39
• Page End: 44
• Publication Date: 2015-01
• Subjects: Ceramics -- Periodicals; 620.1405
• DOI: 10.1179/1743676114Y.0000000185
• Languages: English
• ISSNs: 1743-6753

Abstract

<abstract> <title> <x content-type="archive" xml:space="preserve">Abstract</x> </title> <p>Wetting behaviour of a Cu/Ti₃SiC₂ system was investigated by the sessile drop technique under a vacuum atmosphere. Contact angles between Cu and Ti₃SiC₂ changed from 95 to 15° as temperatures increased from 1089 to 1270°C. Two distinct reaction layers consisting of different contents of Cu, TiC_x, Ti₃SiC₂ and Cu_xSi_y intermetallics were formed at the interface of Cu and Ti₃SiC₂. The formation of the interface layers contributes to the improvement of the wettability of the system. The dissolution of Si from theTi₃SiC₂ into the molten Cu at high temperature plays a dominant role in the wetting behaviour of Cu/Ti₃SiC₂ systems.</p> </abstract>