Interface structure and wetting behaviour of Cu/Ti3SiC2 system. (January 2015) - Lu, J. R.
Abstract Wetting behaviour of a Cu/Ti3SiC2 system was investigated by the sessile drop technique under a vacuum atmosphere. Contact angles between Cu and Ti3SiC2 changed from 95 to 15° as temperatures increased from 1089 to 1270°C. Two distinct reaction layers consisting of different contents of Cu, TiCx, Ti3SiC2 and CuxSiy intermetallics were formed at the interface of Cu and Ti3SiC2. The formation of the interface layers contributes to the improvement of the wettability of the system. The dissolution of Si from theTi3SiC2 into the molten Cu at high temperature plays a dominant role in the wetting behaviour of Cu/Ti3SiC2 systems.