Cite
APA Citation
Killat, N., Pomeroy, J. W., Jimenez, J. L., & Kuball, M. (n.d.). thermal properties of AlGaN/GaN high electron mobility transistors on 4H and 6H SiC substrates. Physica status solidi, 211(12), 2844–2847. http://access.bl.uk/ark:/81055/vdc_100024997913.0x00001f