Cite
HARVARD Citation
Killat, N. et al. (n.d.). Thermal properties of AlGaN/GaN high electron mobility transistors on 4H and 6H SiC substrates. Physica status solidi. 211 (12), pp. 2844-2847. [Online].
This is an interim version of our Electronic Legal Deposit Catalogue-eJournals and eBooks while we continue to recover from a cyber-attack.
Killat, N. et al. (n.d.). Thermal properties of AlGaN/GaN high electron mobility transistors on 4H and 6H SiC substrates. Physica status solidi. 211 (12), pp. 2844-2847. [Online].