Basal plane stacking faults in semipolar AlGaN: Hints to Al redistribution. Issue 11 (24th July 2014)

• Record Type: Journal Article
• Authors: Tischer, Ingo; Frey, Manuel; Hocker, Matthias; Jerg, Lisa; Madel, Manfred; Neuschl, Benjamin; Thonke, Klaus; Leute, Robert A.R.; Scholz, Ferdinand; Groiss, Heiko; Müller, Erich; Gerthsen, Dagmar
• Is Part Of: Physica status solidi. Volume 251:Issue 11(2014:Nov.)
• Page Start: 2321
• Page End: 2325
• Publication Date: 2014-07-24
• Subjects: Solid state physics -- Periodicals; Solids -- Periodicals; Atomic structure -- Periodicals; 530.41
• DOI: 10.1002/pssb.201451252
• Languages: English
• ISSNs: 0370-1972

Abstract

<abstract abstract-type="main" xml:lang="en"> <title> <x xml:space="preserve">Abstract</x> </title> <sec id="pssb201451252-sec-0001" sec-type="section"> <p>We investigate the optical and structural properties of an AlGaN layer with low Al content grown on a <inline-formula><alternatives><inline-graphic mimetype="image" xlink:href="ark:/27927/pgh2cktsdx5" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /><mml:math altimg="urn:x-wiley:15213951:media:pssb201451252:pssb201451252-math-0001" display="inline" overflow="scroll" xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mo>{</mml:mo><mml:mn>1</mml:mn><mml:mover accent="true"><mml:mn>1</mml:mn><mml:mo>‾</mml:mo></mml:mover><mml:mn>01</mml:mn><mml:mo>}</mml:mo></mml:math></alternatives></inline-formula> semipolar GaN facet. The correlation of scanning transmission electron microscopy with high‐resolution cathodoluminescence recorded on the identical sample spot allows to identify the emission features of AlGaN defects. We assign a basal plane stacking fault of <inline-formula><alternatives><inline-graphic mimetype="image" xlink:href="ark:/27927/pgh2cktsfgh" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /><mml:math altimg="urn:x-wiley:15213951:media:pssb201451252:pssb201451252-math-0002" display="inline" overflow="scroll" xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mi mathvariant="normal">I</mml:mi><mml:mn>1</mml:mn></mml:msub></mml:math></alternatives></inline-formula> type to a spatially localized emission <inline-formula><alternatives><inline-graphic mimetype="image" xlink:href="ark:/27927/pgh2cktsffz" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /><mml:math altimg="urn:x-wiley:15213951:media:pssb201451252:pssb201451252-math-0003" display="inline" overflow="scroll" xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mn>80</mml:mn><mml:mspace width="thinmathspace" /><mml:mi mathvariant="normal">meV</mml:mi></mml:math></alternatives></inline-formula> below the (<inline-formula><alternatives><inline-graphic mimetype="image" xlink:href="ark:/27927/pgh2cktsfcv" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /><mml:math altimg="urn:x-wiley:15213951:media:pssb201451252:pssb201451252-math-0004" display="inline" overflow="scroll" xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msup><mml:mi mathvariant="normal">D</mml:mi><mml:mn>0</mml:mn></mml:msup><mml:mi mathvariant="normal">X</mml:mi><mml:mo stretchy="false">)</mml:mo></mml:math></alternatives></inline-formula> in AlGaN. This defect starts inside the GaN template and continues through the AlGaN layer. The energy spacing between the (<inline-formula><alternatives><inline-graphic mimetype="image" xlink:href="ark:/27927/pgh2cktsfb9" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /><mml:math altimg="urn:x-wiley:15213951:media:pssb201451252:pssb201451252-math-0005" display="inline" overflow="scroll" xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msup><mml:mi mathvariant="normal">D</mml:mi><mml:mn>0</mml:mn></mml:msup><mml:mi mathvariant="normal">X</mml:mi></mml:math></alternatives></inline-formula>) related emission band and the corresponding <inline-formula><alternatives><inline-graphic mimetype="image" xlink:href="ark:/27927/pgh2cktsf9r" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /><mml:math altimg="urn:x-wiley:15213951:media:pssb201451252:pssb201451252-math-0006" display="inline" overflow="scroll" xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mi mathvariant="normal">I</mml:mi><mml:mn>1</mml:mn></mml:msub></mml:math></alternatives></inline-formula>‐type basal plane stacking fault emission is larger than in the binary GaN case which indicates a modified Al content at the defect.</p> </sec> </abstract>