Basal plane stacking faults in semipolar AlGaN: Hints to Al redistribution. Issue 11 (24th July 2014) - Tischer, Ingo
Abstract We investigate the optical and structural properties of an AlGaN layer with low Al content grown on a {11‾01} semipolar GaN facet. The correlation of scanning transmission electron microscopy with high‐resolution cathodoluminescence recorded on the identical sample spot allows to identify the emission features of AlGaN defects. We assign a basal plane stacking fault of I1 type to a spatially localized emission 80meV below the (D0X) in AlGaN. This defect starts inside the GaN template and continues through the AlGaN layer. The energy spacing between the (D0X) related emission band and the corresponding I1‐type basal plane stacking fault emission is larger than in the binary GaN case which indicates a modified Al content at the defect.