Mg doping of 3D semipolar InGaN/GaN‐based light emitting diodes. Issue 11 (14th August 2014) - Wang, Junjun
Abstract The effects of different Mg doping concentrations in the main p‐GaN layer and the p‐GaN capping layer on the electroluminescence (EL) properties of three‐dimensional semipolar InGaN/GaN light emitting diode structures grown on GaN stripes with triangular cross‐section were investigated. Secondary ion mass spectrometry analysis revealed the Mg concentration of the 3D semipolar p‐GaN, indicating a higher Mg incorporation efficiency on the {101¯1} facet as compared to the {112¯2} facet. The EL output power is low with a too low Mg concentration of 3 × 1019 cm−3, probably due to the inferior hole injection efficiency and stays almost constant with the Mg concentration ranging from 4 × 1019 cm−3 until 1.3 × 1020 cm−3 for the 3D LEDs with the {101¯1} facet. Heavy Mg doping in the p‐GaN capping layer is required to achieve good ohmic contact performance.