Charge‐Trap Flash‐Memory Oxide Transistors Enabled by Copper–Zirconia Composites. (10th September 2014)

• Record Type: Journal Article
• Authors: Baeg, Kang‐Jun; Kim, Myung‐Gil; Song, Charles K.; Yu, Xinge; Facchetti, Antonio; Marks, Tobin J.
• Is Part Of: Advanced materials. Volume 26:Number 42(2014)
• Page Start: 7170
• Page End: 7177
• Publication Date: 2014-09-10
• Subjects: Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.201401354
• Languages: English
• ISSNs: 0935-9648

Abstract

<abstract abstract-type="graphical" xml:lang="en" id="adma201401354-abs-0001"> <title> <x xml:space="preserve">Abstract</x> </title> <p> <bold>A solution‐processed electrochemical charge‐trap flash memory element</bold> is based on a solid solution of copper and zirconium oxides (Cu‐ZrO₂) as a charge‐trapping layer. Because of the facile reduction of Cu²⁺ to Cu¹⁺, Cu‐ZrO₂ thin films are especially effective in memory devices based on thin‐film transistors when the devices are fabricated from combustion‐processed metal–oxide semiconductors (In₂O₃ and an indium–gallium oxide). <boxed-text content-type="graphic" position="anchor" orientation="portrait"><graphic position="anchor" mimetype="image" xlink:href="ark:/27927/pgh2cn0xkbc" orientation="portrait" xlink:type="simple" xmlns:xlink="http://www.w3.org/1999/xlink" /></boxed-text></p> </abstract>