Charge‐Trap Flash‐Memory Oxide Transistors Enabled by Copper–Zirconia Composites. (10th September 2014) - Baeg, Kang‐Jun
Abstract A solution‐processed electrochemical charge‐trap flash memory element is based on a solid solution of copper and zirconium oxides (Cu‐ZrO2) as a charge‐trapping layer. Because of the facile reduction of Cu2+ to Cu1+, Cu‐ZrO2 thin films are especially effective in memory devices based on thin‐film transistors when the devices are fabricated from combustion‐processed metal–oxide semiconductors (In2O3 and an indium–gallium oxide).