Cite
HARVARD Citation
Mativenga, M. et al. (2013). P.22: Improving Switching Characteristics of Amorphous‐InGaZnO4 Thin‐Film Transistors by Dual‐Gate Driving. Digest of technical papers. 44 (1), pp. 1062-1065. [Online].
This is an interim version of our Electronic Legal Deposit Catalogue-eJournals and eBooks while we continue to recover from a cyber-attack.
Mativenga, M. et al. (2013). P.22: Improving Switching Characteristics of Amorphous‐InGaZnO4 Thin‐Film Transistors by Dual‐Gate Driving. Digest of technical papers. 44 (1), pp. 1062-1065. [Online].