P.22: Improving Switching Characteristics of Amorphous‐InGaZnO4 Thin‐Film Transistors by Dual‐Gate Driving. Issue 1 (1st July 2013)

• Record Type: Journal Article
• Authors: Mativenga, Mallory; Geng, Di; Um, Jae Gwang; Seok, Manju; Kang, Dong Han; Jang, Jin; Mruthyunjaya, Ravi K.; Heiler, Gregory N.; Tredwell, Timothy J.
• Is Part Of: Digest of technical papers. Volume 44:Issue 1(2013)
• Page Start: 1062
• Page End: 1065
• Publication Date: 2013-07-01
• Subjects: Information display systems -- Congresses; 621.3815422
• DOI: 10.1002/j.2168-0159.2013.tb06407.x
• Languages: English
• ISSNs: 0097-966X

Abstract

<abstract abstract-type="main" xml:lang="en"> <title>Abstract</title> <p>When the top‐gate and bottom‐gate of a dual‐gate amorphous‐InGaZnO₄ (a‐IGZO) thin‐film transistor (TFT) are electrically tied together (dual‐gate driving), drain current (I_DS) increases fivefold compared to single‐gate driving (i.e. when driving with either bottom‐gate or top‐gate), resulting in significant enhancement of the driving ability of TFTs for active‐matrix display (AMD) applications. The increase in I_DS is attributed to better gate drive, achieved through the formation of two parallel channels; one at the top surface and the other at the bottom surface of the semiconductor.</p> </abstract>