P.157L: Late News Poster: Characterization of Asymmetrical Negative Bias Stress Effect on the Density‐of‐States and Parasitic Resistances in a‐IGZO Thin‐Film Transistors. Issue 1 (1st July 2013)

• Record Type: Journal Article
• Authors: Jo, Chunhyung; Bae, Hagyoul; Jun, Sungwoo; Choi, Hyunjun; Hwang, Seonwook; Kim, Dae Hwan; Kim, Dong Myong; Ahn, Byung‐Du; Lee, Je‐Hun; Song, Junho
• Is Part Of: Digest of technical papers. Volume 44:Issue 1(2013)
• Page Start: 1070
• Page End: 1073
• Publication Date: 2013-07-01
• Subjects: Information display systems -- Congresses; 621.3815422
• DOI: 10.1002/j.2168-0159.2013.tb06409.x
• Languages: English
• ISSNs: 0097-966X

Abstract

<abstract abstract-type="main" xml:lang="en"> <title>Abstract</title> <p>The dominant mechanism of the negative bias stress (NBS)‐induced instability is investigated not to be a change in the subgap DOS but a change in the parasitic resistance caused by the reduced Schottky barrier of the metal contacts. This was verified by the extracted source/drain resistance and TCAD simulation.</p> </abstract>